Electronic structure of photoresponsive Ag<sub>6</sub>M<sub>2</sub>O<sub>7</sub> (M = Si, Ge)
نویسندگان
چکیده
منابع مشابه
Structure, strain and stability of ultra-thin Ge layers in Si/Ge/Si axial heterojunction nanowires
The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt hetero...
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First-principles total-energy electronic structure calculations based on the full-potential linear-muffin-tinorbital method have been used to study the electronic and mechanical properties of the L12-type ordered nickel-based intermetallics Ni3X ~X5Mn, Al, Ga, Si, Ge!. The calculated values for the equilibrium volume and elastic properties are generally in good agreement with experiments. The l...
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Electronic effects were investigated on the singlet–triplet energy gaps of divalent unsaturated seven- membered ring R2C6H6M (M=C, Si, Ge, Sn, Pb, R= –H, -CH3, i-Pr , t-Bu) at B3LYP/6-311++G** level. All the triplet states of R2C6H6C were more stable than the related the singlet states while all the singlet states of R2C6H6M (M= Si, Ge, Sn, Pb, R= –H, -CH3, i-Pr , t-Bu) were more stable than th...
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A discussion of the limitations of Raman scattering as applied to Ge/Si nanostructures is followed by a summary of our recent efforts to investigate the local structure of various Ge nanostructures, namely, Ge quantum dots MBE grown on bare Si(1 0 0), on Si(1 1 1) with a 0.3 nm SiO2 coverage, and nanocrystals embedded in SiO2, by X-ray absorption fine structure spectroscopy. For the latter case...
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ژورنال
عنوان ژورنال: Journal of the Ceramic Society of Japan
سال: 2016
ISSN: 1348-6535,1882-0743
DOI: 10.2109/jcersj2.15208